英语翻译Metal Oxide Semiconductor Field Effect TransistorsThe BJT and JFET have a diode in their input circuit which controls their mode of operation.The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle,but

英语翻译Metal Oxide Semiconductor Field Effect TransistorsThe BJT and JFET have a diode in their input circuit which controls their mode of operation.The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle,but
英语翻译
Metal Oxide Semiconductor Field Effect Transistors
The BJT and JFET have a diode in their input circuit which controls their mode of operation.The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle,but the diode is buried within the MOSFET.The MOSFET input diode is controlled by an electric field in the gate region,thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.The input impedance of MOSFETs is so high that
there is no mechanism that readily bleeds off the accumulated charge except for humidity,thus they are often packaged with lead shorting wires to drain the charge.The lead shorting devices protect the MOSFETs from charge buildup and the subsequent catastrophic discharge current.All semiconductor devices should be protected from static discharge,but MOSFETs are the
most liable to build up a killing charge.Do not be lax with static protection because some sensitive BJTs are affected by only a few hundred volts static discharge.
The MOSFET is a majority carrier device,and because majority carriers have no recombination delays,the MOSFET achieves extremely high bandwidths and switching times.The gate is electrically isolated from the source,and while this provides the MOSFET with its high input impedance,it also forms a good capacitor.Driving the gate with a dc or a low frequency signal is a snap because ZIN is so high,but driving the gate with a step signal is much harder because the gate capacitance must be charged at the signal rate.This situation leads to a paradox; the high input impedance MOSFET must be driven with a low impedance driver to obtain high switching speeds and low bandwidth.
MOSFETs do not have a secondary breakdown area,and their drain-source resistance has a positive temperature coefficient,so they tend to be self protective.These features,coupled with the very low on resistance and no junction voltage drop when forward biased,make the MOSFET an extremely attractive power supply-switching transistor.
The MOSFET (see Figure 5 for a description) can be visualized as a bar of doped silicon that contains a capacitively coupled diode junction in the middle of the bar.If the silicon bar is doped N,then the MOSFET is called an N-channel device.When the n-channel gate is charged negative with respect to the source the internal gate diode is biased off,the bar is depleted of carriers,and the source to drain resistance is quite high (several hundred M).When the n-channel gate is charged positive with respect to the source,the internal gate diode is biased on,and the bar is flooded with carriers thus causing a low source to drain resistance (in the low mrange).The converse is true for a P-channel MOSFE

英语翻译Metal Oxide Semiconductor Field Effect TransistorsThe BJT and JFET have a diode in their input circuit which controls their mode of operation.The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle,but
金属氧化物半导体场效应晶体管
该bjt和jfet有一个二极管在其输入电路控制他们的运作模式.该金属氧化物半导体场效应晶体管（ MOSFET ）的电源工程的一项类似的原则,但二极管是埋在MOSFET的.MOSFET的输入二极管是由一个电场,在门地区,因此,输入阻抗始终是非常高的原因是没有提出偏颇的二极管,以降低输入阻抗.输入阻抗MOSFET的是如此之高,
是没有的机制,容易流血关闭积累电荷除湿度,因此,他们往往是包装与铅抛空电线,排水费.带头短路保护装置的MOSFET由负责建设和其后的灾难性的放电电流.所有半导体器件应得到保护,免受静电放电,但MOSFET的是
最容易建立一个杀害负责.不要松懈,与静态的保护,因为一些敏感的bjts受影响的只有少数100伏特静电放电.
MOSFET的是大多数运营商的设备,并且由于大多数运营商没有重组的延误,MOSFET的达到非常高的带宽和开关次数.门是电气绝缘,从源头上,而这提供了MOSFET和其高输入阻抗,它也形成了一个良好的电容器.驾驶门,与DC或低频信号是一个管理单元,因为zin是如此之高,但驾驶门与阶跃信号是困难得多,因为栅电容必须被落案控在信号率.这种情况导致了一种悖论;高输入阻抗MOSFET的驱动必须与低阻抗的驱动程序,以获取高开关速度和低带宽.
MOSFET的不具备二次击穿区,和他们的漏源电阻具有正温度系数,所以他们往往是自我保护.这些特点,再加上非常低的抗性和没有交界处的压降时,提出带有偏见,使MOSFET的一个极具吸引力的供电开关晶体管.
MOSFET的（见图5说明） ,可以可视化作为一个酒吧掺杂硅包含电容耦合二极管的交界处,在中东的香港大律师公会.如果硅酒吧是掺杂n ,那么MOSFET的是所谓的一N通道装置.当N通道门是被控消极方面,从源头上内部门二极管是偏颇的小康,大律师公会是资源枯竭的运营商,并从源头漏极电阻是相当高的（数百米） .当N通道门是被控积极与尊重的来源,内部门二极管是偏颇的对,及大律师公会是充斥着运营商,从而造成了低来源漏极电阻（在低mrange ） .反过来也是如此,一个P -频道mosfe